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Probes
Silicon probe with sharp tip for high resolution imaging in force modulation mode.
f = 75 kHz | k = 2.8 N/m | tip coating: none
Silicon probe coated with high moment material for MFM.
f = 75 kHz | k = 2.8 N/m | tip coating: hard magnetic
Nitride probe with shielded co-axial sensor specialized for sMIM applications.
f = 75 kHz | k = 8 N/m | tip coating: TiW/Au
Silicon probe with sharp tip for high resolution imaging in force modulation mode.
f = 75 kHz | k = 2.8 N/m | tip coating: none
Nitride probe with shielded co-axial sensor specialized for sMIM applications.
f = 19 kHz | k = 1 N/m | tip coating: TiW/Au
Silicon probe with high aspect ratio tip (>5) for deep trench imaging.
f = 330 kHz | k = 42 N/m | tip coating: none
CoNi side-coated tip silicon probe for high hi-resolution MFM.
f = 75 kHz | k = 2.8 N/m | tip coating: CoNi
Silicon probe with sharp tip for high resolution imaging in tapping/non-contact mode.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe coated with low coercivity material for MFM on soft magnetic samples.
f = 75 kHz | k = 2.8 N/m | tip coating: soft magnetic
Conductive probe with visible tip apex for electrical measurements in modulation mode.
f = 85 kHz | k = 2.8 N/m | tip coating: Pt/Ir
Silicon probe with high aspect ratio tip (>5) for deep trench imaging.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with sharp tip for high resolution imaging in tapping/non-contact mode.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe coated with low moment material for MFM on magnetic samples.
f = 75 kHz | k = 2.8 N/m | tip coating: hard magnetic
Ni side-coated tip silicon probe for high hi-resolution MFM.
f = 75 kHz | k = 2.8 N/m | tip coating: Ni
Conductive silicon probe with visible tip apex for contact mode electrical measurements.
f = 15 kHz | k = 0.2 N/m | tip coating: Au
Silicon probe with high aspect ratio tip (>5) for deep trench imaging.
f = 190 kHz | k = 48 N/m | tip coating: none
Silicon probe with sharp tip and long cantilever for high resolution imaging in tapping/non-contact mode.
f = 190 kHz | k = 48 N/m | tip coating: none
Silicon probe with plateau tip for contact mode.
f = 15 kHz | k = 0.2 N/m | tip coating: none
Conductive probe with tip visible at end of lever.
f = 85 kHz | k = 2.8 N/m | tip coating: Au
Silicon probe with sharp tip and long cantilever for high resolution imaging in tapping/non-contact mode.
f = 190 kHz | k = 48 N/m | tip coating: none
Silicon probe with Al reflective coating and plateau tip for contact mode.
f = 15 kHz | k = 0.2 N/m | tip coating: none
Conductive probe with visible tip apex for electrical measurements in contact mode.
f = 15 kHz | k = 0.2 N/m | tip coating: Pt/Ir
Conductive silicon probe with Au tip coating and visible tip apex.
f = 335 kHz | k = 45 N/m | tip coating: Au
Silicon probe with plateau tip with Al reflex coating.
f = 190 kHz | k = 48 N/m | tip coating: none
Silicon probe with plateau tip with Al reflex coating.
f = 330 kHz | k = 42 N/m | tip coating: none
High Q silicon probe with Al reflective coating for force modulation in vacuum.
f = 75 kHz | k = 2.8 N/m | tip coating: none
Silicon probe with plateau tip for non-contact/tapping mode.
f = 330 kHz | k = 42 N/m | tip coating: none
Conductive probe with visible tip apex for electrical measurements.
f = 335 kHz | k = 45 N/m | tip coating: Pt/Ir
Silicon probe with plateau tip.
f = 190 kHz | k = 48 N/m | tip coating: none
Silicon probe with plateau tip for force modulation.
f = 75 kHz | k = 2.8 N/m | tip coating: none
Silicon probe with high Q and Al reflective coating for tapping/non contact mode in vacuum.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with plateau tip and Al reflective coating for force modulation.
f = 75 kHz | k = 2.8 N/m | tip coating: none
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