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Probes
Silicon probe with sharp tip for high resolution imaging in force modulation mode.
f = 75 kHz | k = 2.8 N/m | tip coating: none
Sharp conductive probe with PtSi coating for electrical measurements.
f = 75 kHz | k = 2.8 N/m | tip coating: PtSi
Silicon probe with Al reflective coating for force modulation.
f = 75 kHz | k = 2.8 N/m | tip coating: none
Silicon probe with short cantilever and Al reflective coating for contact mode.
f = 23 kHz | k = 0.2 N/m | tip coating: none
Silicon probe with Al reflective coating for tapping/non contact mode.
f = 330 kHz | k = 42 N/m | tip coating: none
Nitride probe with shielded co-axial sensor specialized for sMIM applications.
f = 19 kHz | k = 1 N/m | tip coating: TiW/Au
Quartz like probe with more stability for contact mode.
f = 30 kHz | k = 0.1 N/m | tip coating: none
Conductive probe for electrical measurements in force modulation mode.
f = 75 kHz | k = 2.8 N/m | tip coating: Pt/Ir
Silicon probe without reflective coating for contact mode.
f = 15 kHz | k = 0.2 N/m | tip coating: none
Quartz like probe with three cantilevers for contact mode.
f = 30 & 50 & 90 kHz | k = 0.06 & 0.1 & 0.3 N/m | tip coating: none
Silicon probe with no reflective coating for soft tapping mode.
f = 160 kHz | k = 7.4 N/m | tip coating: none
Silicon probe with high aspect ratio (>10) tip for deep trench imaging.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with Al reflective coating for soft tapping mode.
f = 160 kHz | k = 7.4 N/m | tip coating: none
Quartz like probe with more stability for soft contact mode.
f = 11 kHz | k = 0.01 N/m | tip coating: none
Silicon probe with sharp tip for high resolution imaging in force modulation mode.
f = 75 kHz | k = 2.8 N/m | tip coating: none
Silicon probe coated with high moment material for MFM.
f = 75 kHz | k = 2.8 N/m | tip coating: hard magnetic
Silicon probe with Au reflex coating for tapping/non contact mode.
f = 330 kHz | k = 42 N/m | tip coating: none
Nitride probe with shielded co-axial sensor specialized for sMIM applications.
f = 75 kHz | k = 8 N/m | tip coating: TiW/Au
Silicon probe with visible tip apex.
f = 335 kHz | k = 45 N/m | tip coating: none
Silicon probe with no reflective coating for force modulation.
f = 75 kHz | k = 2.8 N/m | tip coating: none
Silicon probe with no reflex coating for tapping/non contact mode.
f = 330 kHz | k = 42 N/m | tip coating: none
Quartz like probe with two triangular cantilevers for contact mode.
f = 20 & 50 kHz | k = 0.08 & 0.3 N/m | tip coating: none
Silicon probe with conductive diamond coated tip for electrical measurements.
f = 400 kHz | k = 80 N/m | tip coating: conductive diamond
Silicon probe with high aspect ratio tip (>10) for deep trench imaging.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with sharp tip for high resolution imaging in tapping/non-contact mode.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with Au reflective coating for contact mode.
f = 15 kHz | k = 0.2 N/m | tip coating: none
Silicon probe with high aspect ratio tip (>5) for deep trench imaging.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with Au reflective coating for soft tapping mode.
f = 160 kHz | k = 7.4 N/m | tip coating: none
Silicon probe with high aspect ratio tip (>5) for deep trench imaging.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with tip visible at end of lever for force modulation.
f = 85 kHz | k = 2.8 N/m | tip coating: none
Silicon probe with long cantilevr and Au reflective coating for tapping/non contact mode.
f = 190 kHz | k = 48 N/m | tip coating: none
Silicon probe coated with low moment material for MFM on magnetic samples.
f = 75 kHz | k = 2.8 N/m | tip coating: hard magnetic
Conductive silicon probe with Au tip coating for electrical measurements in non-contact/tapping mode.
f = 330 kHz | k = 42 N/m | tip coating: Au
Silicon probe with rotated tip and Al reflective coating for contact mode.
f = 13 kHz | k = 0.2 N/m | tip coating: none
Silicon probe with sharp tip for high resolution imaging in tapping/non-contact mode.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with Al reflective coating for contact mode.
f = 15 kHz | k = 0.2 N/m | tip coating: none
Silicon probe with rotated tip and Al reflective coating for tapping/non contact mode.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe coated with thin magnetic material for high resolution MFM.
f = 75 kHz | k = 2.8 N/m | tip coating: hard magnetic
Silicon probe with long cantilever for tapping/non contact mode.
f = 190 kHz | k = 48 N/m | tip coating: none
Silicon probe with conductive diamond coating for force modulation mode.
f = 105 kHz | k = 6.2 N/m | tip coating: conductive diamond
Silicon probe with high aspect ratio tip (>5) for deep trench imaging.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with Au reflective coating for force modulation.
f = 75 kHz | k = 2.8 N/m | tip coating: none
Silicon probe with short cantilever and Au reflective coating for contact mode.
f = 23 kHz | k = 0.2 N/m | tip coating: none
Silicon probe with high aspect ratio tip (>10) for deep trench imaging.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with long cantilever and Al reflective coating for tapping/non contact mode.
f = 190 kHz | k = 48 N/m | tip coating: none
Silicon probe with rotated tip for force modulation.
f = 75 kHz | k = 2.8 N/m | tip coating: none
Conductive probe with visible tip apex for electrical measurements in modulation mode.
f = 85 kHz | k = 2.8 N/m | tip coating: Pt/Ir
Silicon probe with visible tip apex for contact mode.
f = 15 kHz | k = 0.2 N/m | tip coating: none
Silicon probe with high aspect ratio tip (>5) for deep trench imaging.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with high aspect ratio tip (>10) for deep trench imaging.
f = 330 kHz | k = 42 N/m | tip coating: none
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