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Probes
Also known as OTESPA; silicon probe with visible apex tip for tapping mode.
f = 300 kHz | k = 26 N/m | tip coating: none
Silicon probe with visible apex tip for force modulation or soft tapping on medium to hard samples.
f = 150 kHz | k =9 N/m | tip coating: none
Also known as OLTESPA; medium soft cantilever for topgraphy and viscoelasticity of soft samples.
f = 70 kHz | k = 2 N/m | tip coating: none
Silicon probe with visible tip apex and Al reflex coating for high speed imaging.
f = 1500 kHz | tip coating: none
Silicon probe with visible tip apex and magnetic coating for low coercivity MFM applications.
f = 75 kHz | k = 2.8 N/m | tip coating: permalloy
Silicon probe with visible tip apex and Au reflex coating for high speed imaging.
f = 1500 kHz | tip coating: none
Also known as OSCM; conductive probe with visible apex tip for electrical measurement.
f = 70 kHz | k = 2 N/m | tip coating: Ti/Pt
Silicon probe with Al reflective coating for soft tapping mode.
f = 160 kHz | k = 7.4 N/m | tip coating: none
Silicon probe with Al reflective coating for tapping/non contact mode.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe coated with high moment material for MFM.
f = 75 kHz | k = 2.8 N/m | tip coating: hard magnetic
Silicon probe with Al reflective coating for force modulation.
f = 75 kHz | k = 2.8 N/m | tip coating: none
Silicon probe with sharp tip for high resolution imaging in force modulation mode.
f = 75 kHz | k = 2.8 N/m | tip coating: none
Silicon probe with short cantilever and Al reflective coating for contact mode.
f = 23 kHz | k = 0.2 N/m | tip coating: none
Silicon probe with high aspect ratio tip (>5) for deep trench imaging.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe coated with thin magnetic material for high resolution MFM.
f = 75 kHz | k = 2.8 N/m | tip coating: hard magnetic
Silicon probe with high aspect ratio tip (>10) for deep trench imaging.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with rotated tip for force modulation.
f = 75 kHz | k = 2.8 N/m | tip coating: none
Silicon probe with sharp tip for high resolution imaging in tapping/non-contact mode.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with rotated tip and Al reflective coating for contact mode.
f = 13 kHz | k = 0.2 N/m | tip coating: none
Silicon probe with rotated tip and Al reflective coating for tapping/non contact mode.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with conductive diamond coating for force modulation mode.
f = 105 kHz | k = 6.2 N/m | tip coating: conductive diamond
Silicon probe with Al reflective coating for contact mode.
f = 15 kHz | k = 0.2 N/m | tip coating: none
Silicon probe coated with low coercivity material for MFM on soft magnetic samples.
f = 75 kHz | k = 2.8 N/m | tip coating: soft magnetic
Silicon probe with high aspect ratio tip (>10) for deep trench imaging.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with long cantilever and Al reflective coating for tapping/non contact mode.
f = 190 kHz | k = 48 N/m | tip coating: none
Silicon probe with high aspect ratio tip (>5) for deep trench imaging.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with conductive diamond coated tip for electrical measurements.
f = 400 kHz | k = 80 N/m | tip coating: conductive diamond
Silicon probe coated with low moment material for MFM on magnetic samples.
f = 75 kHz | k = 2.8 N/m | tip coating: hard magnetic
Silicon probe with conductive diamond coated tip for electrical measurements.
f = 20 kHz | k = 0.5 N/m | tip coating: conductive diamond
Silicon probe with high aspect ratio tip (>5) for deep trench imaging.
f = 190 kHz | k = 48 N/m | tip coating: none
Silicon probe with Al reflex coating and diamond coated tip for force modulation mode on tip degrading samples.
f = 105 kHz | k = 6.2 N/m | tip coating: diamond
Silicon probe with Al reflective coating and plateau tip for contact mode.
f = 15 kHz | k = 0.2 N/m | tip coating: none
Silicon probe for lateral force microscopy.
f = 23 kHz | k = 0.2 N/m | tip coating: none
Silicon probe with conductive diamond coated tip and long cantilever for electrical measurements.
f = 210 kHz | k = 72 N/m | tip coating: conductive diamond
Silicon probe with diamond coated tip for tapping/non-contact mode on tip degrading samples.
f = 400 kHz | k = 80 N/m | tip coating: diamond
Silicon probe with Al reflex coating and diamond coated tip for contact mode on tip degrading samples.
f = 20 kHz | k = 0.5 N/m | tip coating: diamond
Silicon probe with sharp tip and long cantilever for high resolution imaging in tapping/non-contact mode.
f = 190 kHz | k = 48 N/m | tip coating: none
Silicon probe with diamond coated tip and long cantilever for tip degrading samples.
f = 210 kHz | k = 72 N/m | tip coating: diamond
High Q silicon probe with Al reflective coating for force modulation in vacuum.
f = 75 kHz | k = 2.8 N/m | tip coating: none
Silicon probe with plateau tip with Al reflex coating.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with plateau tip with Al reflex coating.
f = 190 kHz | k = 48 N/m | tip coating: none
Silicon probe with high Q and Al reflective coating for tapping/non contact mode in vacuum.
f = 330 kHz | k = 42 N/m | tip coating: none
Silicon probe with plateau tip and Al reflective coating for force modulation.
f = 75 kHz | k = 2.8 N/m | tip coating: none
Silicon probe coated with thin magnetic material for high resolution MFM in vacuum.
f = 75 kHz | k = 2.8 N/m | tip coating: hard magnetic
Silicon probe with XY auto-alignment and Al reflective coating for contact mode.
f = 13 kHz | k = 0.2 N/m | tip coating: none
Silicon probe coated with low coercivity material for MFM in vacuum.
f = 75 kHz | k = 2.8 N/m | tip coating: soft magnetic
Silicon probe with XY auto-alignment for soft tapping.
f = 160 kHz | k = 7.4 N/m | tip coating: none
Silicon probe with XY-auto-alignment probes for non-contact /tapping mode application.
f = 330 kHz | k = 42 N/m | tip coating: none
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